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WP3 – Circuit implementation: Smart energy and RF

In work package 3 we explore the use of 3D integration technologies to enable innovative merging of control electronics and power devices and make an early evaluation of system benefits and technology limitations.

The topics include:

  • Characterization and modelling of DC and RF performance of III-V nanowire transistors
  • Fabrication of amplifiers, switches, or detector circuits operating at D-band frequencies
  • Evaluation of thermal properties of III-V nanowire and GaN transistors using pulsed electrical characterization.
  • The use of pulsed coherent radar for gesture control and the increase of frequency to D band
  • Increasing breakdown voltage in SiC MOSFET and heterogenous integration with FDSOI
  • Heterogenous integration of GaN with Si control electronics for inverters and DCDC converters.
  • Development of packaging technology for GaN
Last updated: 4 Mar 2025 | fariba [dot] vaziri-sani [at] fsi [dot] lu [dot] se