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WP1 – Devices for 3D Integration

In work package 1 we will develop materials, processes and devices to be used in WP2 and WP3.

The topics include:

  • Material synthesis with emphasis on III-V nanowire epitaxial growth both using metal organic vapor phase epitaxy and aerotaxy.
  • Scaling of nanowire growth substrates from individual dies to 100 mm Si wafers
  • Nanowire surface passivation for photonic devices and gate-stack optimization for transistors
  • Introduction of ferroelectric HfZrO for reconfigurable electronics and ultrafast optoelectronic switching
  • Device processing for heterogeneous 3D integration of FDSOI CMOS and III-V components.
  • Transfer of layers and devices for monolithic 3D integration
  • Development of 3D Interconnect technology
Last updated: 4 Mar 2025 | fariba [dot] vaziri-sani [at] fsi [dot] lu [dot] se